Single Electron Devices Based on Nanocrystalline Silicon
نویسندگان
چکیده
nano-crystalline Si dots of dimensions of 8nm have been incorporated into a variety of Coulomb blockade and floating gate memory devices. Structures include vertical transistor, planar electrode, nanoscale channel junction and 2-gate trench structure. Ballistic transport, Coulomb oscillation and memory effects are clearly demonstrated
منابع مشابه
Point Defects in Amorphous and Nanocrystalline Fluorinated Silicon Films
Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durabi...
متن کاملNanocrystalline silicon quantum dots prepared by VHF plasma-enhanced chemical vapor deposition
Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and display devices. Various methods have been demonstrated for the fabrication of nanocrystalline silicon with size less than 10nm. We have prepared nanocrystalline silicon ultrafine particles by very-high-frequency plasma decomposition of silane and hydrogen. Nanoparticles formed in the plasma cell...
متن کاملMicrostructural and biological properties of nanocrystalline diamond coatings
In this study, the microstructural, mechanical, adhesion, and hemocompatibility properties of nanocrystalline diamond coatings were examined. Microwave plasma chemical vapor deposition (MPCVD) was used to deposit nanocrystalline diamond coatings on silicon (100) substrates. The coating surface consisted of faceted nodules, which exhibited a relatively wide size distribution and an average size ...
متن کاملOptical modelling of a Si-based DBR laser source using a nanocrystal Si-sensitized Er-doped silica rib waveguide in the C-band
The availability of reliable silicon-based laser sources is at the basis of the integration of photonic and microelectronic devices on a single chip with consequent development of wavelength division multiplexing telecommunication systems. A high efficiency Si-based laser source with good stability at room temperature would encourage and push the large scale of integration of electronic and pho...
متن کاملLow temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cmVs, which are very high taking into account the amorphous nature of the material. Nanocrystalline transist...
متن کامل